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| SUM85N03-08P Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.0075 @ VGS = 10 V 0.0105 @ VGS = 4.5 V ID (A) 85 72 D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency New Package with Low Thermal Resistance 100% Rg Tested APPLICATIONS D TO-263 D Buck Converter - High Side - Low Side D Synchronous Rectifier - Secondary Rectifier G G DS Top View S Ordering Information: SUM85N03-08P SUM85N03-08P-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 85 60 200 50 125 100b 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mountc Junction-to-Ambient J ti t A bi t Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 71816 S-32523--Rev. D, 08-Dec-03 www.vishay.com Free Air RthJA RthJC Symbol Limit 40 62.5 1.5 Unit _C/W C/W 1 SUM85N03-08P Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS ID(on) VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Drain Source On State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 30 A 20 0.0085 120 0.006 0.0075 0.011 0.014 0.0105 S W 30 1 2 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-Resistance Total Gate Chargeb Gate-Source Chargeb Gate-Drain Chargeb Turn-On Delay Timeb Rise Timeb Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.5 W ID ^ 30 A, VGEN = 10 V, Rg = 2.5 W VDS = 15 V, VGS = 4.5 V, ID = 30 A , , 0.5 VGS = 0 V, VDS = 25 V, f = 1 MHz 1725 425 120 1.9 13 4.5 4.0 10 160 30 55 15 240 45 85 ns 3.3 18 nC W pF Turn-Off Delay Timeb Fall Timeb Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time IS ISM VSD trr IF = 30 A, VGS = 0 V IF = 85 A, di/dt = 100 A/ms 1.2 80 70 200 1.5 110 A V ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71816 S-32523--Rev. D, 08-Dec-03 SUM85N03-08P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 200 VGS = 10 thru 5 V 150 I D - Drain Current (A) 4V 100 I D - Drain Current (A) 80 60 40 20 0 0.0 120 100 Transfer Characteristics 50 3V 2V 0 2 4 6 8 10 TC = 125_C 25_C -55_C 2.5 3.0 3.5 4.0 4.5 0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 100 TC = -55_C r DS(on) - On-Resistance ( W ) 80 g fs - Transconductance (S) 25_C 60 125_C 0.015 0.020 On-Resistance vs. Drain Current 0.010 VGS = 4.5 V VGS = 10 V 40 20 0.005 0 0 20 40 60 80 100 0.000 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) 2500 Capacitance 10 VDS = 15 V ID = 30 A Gate Charge 2000 C - Capacitance (pF) V GS - Gate-to-Source Voltage (V) Ciss 8 1500 6 1000 Coss 500 Crss 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) 4 2 0 0 5 10 15 20 25 30 35 40 Qg - Total Gate Charge (nC) www.vishay.com Document Number: 71816 S-32523--Rev. D, 08-Dec-03 3 SUM85N03-08P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.00 1.75 r DS(on) - On-Resistance (W) (Normalized) 1.50 1.25 1.00 0.75 0.50 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 30 A I S - Source Current (A) 50 Source-Drain Diode Forward Voltage 10 TJ = 150_C TJ = 25_C -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) THERMAL RATINGS Maximum Avalanche Drain Current vs. Ambient Temperature 100 1000 Safe Operating Area 80 I D - Drain Current (A) I D - Drain Current (A) 100 10 ms 100 ms 1 ms 10 ms 100 ms dc 60 10 Limited by rDS(on) 40 1 20 0.1 TA = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 TA - Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71816 S-32523--Rev. D, 08-Dec-03 4 |
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